CHANNELING ANALYSIS OF MISMATCH STRAIN IN HETEROEPITAXIAL CDTE ON CD0.96ZN0.04TE(001)

被引:7
作者
CHAMI, AC
LIGEON, E
FONTENILLE, J
DANIELOU, R
机构
关键词
D O I
10.1063/1.339254
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3718 / 3721
页数:4
相关论文
共 17 条
  • [1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    FELDMAN, LC
    FIORY, AT
    NAKAHARA, S
    ROBINSON, IK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
  • [2] STRAIN IN SELF-IMPLANTED SILICON
    CHAMI, AC
    LIGEON, E
    DANIELOU, R
    FONTENILLE, J
    EYMERY, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 161 - 165
  • [3] RESONANCE BETWEEN THE WAVELENGTH OF PLANAR-CHANNELED PARTICLES AND THE PERIOD OF STRAINED-LAYER SUPERLATTICES
    CHU, WK
    ELLISON, JA
    PICRAUX, ST
    BIEFELD, RM
    OSBOURN, GC
    [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 125 - 128
  • [4] Feldman L. C., 1982, MATERIALS ANAL ION C, P93
  • [5] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100)
    FIORY, AT
    BEAN, JC
    FELDMAN, LC
    ROBINSON, IK
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229
  • [6] FONTAINE C, 1986, THESIS U GRENOBLE
  • [7] STEERING EFFECT AT A STRAINED NISI2/SI (001) INTERFACE
    HASHIMOTO, S
    FENG, YQ
    GIBSON, WM
    SCHOWALTER, LJ
    HUNT, BD
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 45 - 50
  • [8] PARTIAL SEPARATIONS OF EXTENDED ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN II-VI SEMICONDUCTORS
    LU, G
    COCKAYNE, DJH
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (03): : 307 - 320
  • [9] MADELUNG O, 1982, LANDOLTBORNSTEIN NUM, V17, P62907
  • [10] MISMATCH STRAIN-MEASUREMENTS OF MBE GROWN CDTE
    MAGNEA, N
    DALBO, F
    FONTAINE, C
    MILLION, A
    GAILLARD, JP
    DANG, LS
    DAUBIGNE, YM
    TATARENKO, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 501 - 504