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WHAT CAN MOLECULAR-BEAM EPITAXY DO FOR SILICON DEVICES

被引：3
作者：
ALLEN, FG
机构：
来源：
THIN SOLID FILMS | 1985年 / 123卷 / 04期
关键词：
D O I：
10.1016/0040-6090(85)90001-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：273 / 279
页数：7
相关论文
共 6 条
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[2]  
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[4]   EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
METZGER, RA ;
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[5]   DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY [J].
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[6]   SILICON TRIANGULAR BARRIER DIODES BY MBE USING SOLID-PHASE EPITAXIAL REGROWTH [J].
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ALLEN, FG .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :254-256
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