PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2/AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS

被引：36

作者：

SHUL, RJ ^{[1
]}

LOVEJOY, ML ^{[1
]}

HETHERINGTON, DL ^{[1
]}

RIEGER, DJ ^{[1
]}

KLEM, JF ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma-induced etch damage often degrades the electrical and optical performance of III-V high-density integrated circuits and photonic devices. We have investigated the etch-induced damage of electron cyclotron resonance (ECR) generated plasmas on the electrical performance of mesa-isolated GaAs pn-junction diodes. Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar ECR plasmas at ion energies ranging from 10 to 200 eV were studied. Diodes fabricated under low dc-bias (≤100 V) etch conditions yielded low reverse-bias currents which were comparable to wet-chemical-etched devices. As the dc bias was increased, the diodes showed significantly higher reverse-bias currents indicating plasma-induced sidewall damage of the pn-junction. Variations in diode reverse-bias leakage currents are reported as a function of plasma parameters and chemistries.

引用

页码：27 / 33

页数：7

共 24 条

[1] REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4 [J].