A MONTE-CARLO STUDY OF ELECTRON-HOLE SCATTERING AND STEADY-STATE MINORITY-ELECTRON TRANSPORT IN GAAS

被引：9

作者：

SADRA, K

MAZIAR, CM

STREETMAN, BG

TANG, DS

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,AUSTIN,TX 78712

[2] UNIV TEXAS,DEPT PHYS,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2205 / 2207

页数：3

共 21 条

[1] ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT
AHRENKIEL, RK
DUNLAVY, DJ
GREENBERG, D
SCHLUPMANN, J
HAMAKER, HC
MACMILLAN, HF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 776 - 778
[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS
CHANG, MCF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
SHENG, NH
HIGGINS, JA
MILLER, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305
[3] VELOCITY-FIELD CHARACTERISTICS OF MINORITY-CARRIERS (ELECTRONS) IN P-IN0.53GA0.47AS
DEGANI, J
LEHENY, RF
NAHORY, RE
HERITAGE, JP
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 569 - 572
[4] DYAKONOV MI, 1977, SOV PHYS SEMICOND+, V11, P801
[5] NEGATIVE ABSOLUTE MOBILITY OF MINORITY ELECTRONS IN GAAS QUANTUM-WELLS
HOPFEL, RA
SHAH, J
WOLFF, PA
GOSSARD, AC
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (25) : 2736 - 2739
[6] VALIDITY OF BORN APPROXIMATION AS APPLIED TO ELECTRON-ELECTRON SCATTERING IN METALS - IMPLICATIONS FOR THERMAL-CONDUCTIVITY
KUKKONEN, CA
SMITH, H
[J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4601 - 4606
[7] NONEQUILIBRIUM ELECTRON-TRANSPORT IN BIPOLAR-DEVICES
LEVI, AFJ
YAFET, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 42 - 44
[8] DYNAMIC SCREENING OF HOT CARRIERS IN SEMICONDUCTORS FROM A COUPLED MOLECULAR-DYNAMICS AND ENSEMBLE MONTE-CARLO SIMULATION
LUGLI, P
FERRY, DK
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1295 - 1297
[9] MONTE-CARLO EVALUATION OF ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTOR BASE STRUCTURES
MAZIAR, CM
KLAUSMEIERBROWN, ME
BANDYOPADHYAY, S
LUNDSTROM, MS
DATTA, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 881 - 888
[10] SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER
NAGATA, K
NAKAJIMA, O
YAMAUCHI, Y
NITTONO, T
ITO, H
ISHIBASHI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 2 - 7

← 1 2 3 →