ULTRA-LARGE SCALE INTEGRATION

被引：29

作者：

MEINDL, JD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 11期

关键词：

D O I：

10.1109/T-ED.1984.21752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1555 / 1561

页数：7

共 30 条

[1]

BAKOGLU HB, 1984, FEB ISSCC, P164

[2] RESOLUTION, OVERLAY, AND FIELD SIZE FOR LITHOGRAPHY SYSTEMS [J].

BROERS, AN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1268-1278

[3]

BRUNING JH, 1981, SEMICONDUCTOR IN APR, P137

[4]

COTTRELL PE, 1982 IEEE IEDM, P548

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[6] 0.15 MU-M CHANNEL-LENGTH MOSFETS FABRICATED USING E-BEAM LITHOGRAPHY [J].

FICHTNER, W ;

WATTS, RK ;

FRASER, DB ;

JOHNSTON, RL ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :412-414

[7]

Folberth O. G., 1979, Microelectronics Journal, V9, P33

[8]

GIBBONS JF, 1982 IEEE IEDM, P111

[9] AN ACCURATE AND SIMPLE MOSFET MODEL FOR COMPUTER-AIDED-DESIGN [J].

HANAFI, HI ;

CAMNITZ, LH ;

DALLY, AJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) :882-891

[10] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J].

IHANTOLA, HKJ ;

MOLL, JL .

SOLID-STATE ELECTRONICS, 1964, 7 (06) :423-430

← 1 2 3 →