ION CHANNELING STUDIES OF LOW-ENERGY ION-BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON

被引：14

作者：

VITKAVAGE, DJ ^{[1
]}

DALE, CJ ^{[1
]}

CHU, WK ^{[1
]}

FINSTAD, TG ^{[1
]}

MAYER, TM ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

关键词：

D O I：

10.1016/0168-583X(86)90519-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：313 / 318

页数：6

共 22 条

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