ION CHANNELING STUDIES OF LOW-ENERGY ION-BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON

被引：14

作者：

VITKAVAGE, DJ ^{[1
]}

DALE, CJ ^{[1
]}

CHU, WK ^{[1
]}

FINSTAD, TG ^{[1
]}

MAYER, TM ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期

关键词：

D O I：

10.1016/0168-583X(86)90519-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：313 / 318

页数：6

共 22 条

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[14] Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0
[15] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING
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[18] INELASTIC STOPPING OF MEDIUM ENERGY LIGHT-IONS IN SILICON
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4): : 169 - 175
[19] TOWNSEND PD, 1976, ION IMPLANTATION SPU
[20] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 207 - 217

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