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A DUAL-SOURCE LOW-ENERGY MASS-ANALYZED ION-BEAM SYSTEM FOR SEMICONDUCTOR EPITAXY AND NOVEL MATERIALS GROWTH

被引：12
作者：
GORDON, JS
ARMOUR, DG
DONNELLY, SE
VANDENBERG, JA
MARTON, D
RABALAIS, JW
机构：
[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND
[2] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
关键词：
D O I：
10.1016/0168-583X(91)95230-B
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100-mu-A cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.
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收藏
页码：312 / 315
页数：4
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