OXIDATION-ENHANCED OR RETARDED DIFFUSION AND THE GROWTH OR SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：95

作者：

TAN, TY

GOSELE, U

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：616 / 619

页数：4

共 20 条

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[8]

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