GEOMETRICAL MAGNETORESISTANCE EFFECT IN SEMICONDUCTORS WITH MIXED CONDUCTIVITY - DETERMINATION OF THE ELECTRON HALL-MOBILITY IN SEMI-INSULATING GAAS

被引：10

作者：

BETKO, J

MERINSKY, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1983年 / 77卷 / 01期

关键词：

D O I：

10.1002/pssa.2210770137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：331 / 337

页数：7

共 21 条

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[16]

PUTLEY EH, 1960, HALL EFFECT RELATED, pCH3

RODE, DL .

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[18] MAGNETORESISTANCE MOBILITY PROFILING OF MESFET CHANNELS [J].

SITES, JR ;

WIEDER, HH .

[19]

WALUKIEWICZ W, 1982, SEMIINSULATING 3 5 M, P121

[20]

WINTER JJ, 1982, SEMIINSULATING 3 5 M, P134