MAGNETORESISTANCE MOBILITY PROFILING OF MESFET CHANNELS

被引：28

作者：

SITES, JR ^{[1
]}

WIEDER, HH ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期

关键词：

D O I：

10.1109/T-ED.1980.20265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2277 / 2281

页数：5

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[7] SIMPLE METHOD OF MEASURING DRIFT-MOBILITY PROFILES IN THIN SEMICONDUCTOR-FILMS [J].

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[8] AC PROFILING BY SCHOTTKY GATED CLOVERLEAF [J].

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[9]

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[10] SERIES RESISTANCE EFFECTS IN SEMICONDUCTOR CV PROFILING [J].

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