AN OPTICAL BRIDGE REFLECTOMETER FOR SENSITIVE MEASUREMENT OF ION-IMPLANTATION DOSE

被引：3

作者：

GUIDOTTI, D ^{[1
]}

WILMAN, JG ^{[1
]}

RICCI, AJ ^{[1
]}

机构：

[1] IBM CORP,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 06期

关键词：

D O I：

10.1007/BF00324342

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystalline damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5.10(-7) can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5.10(8) cm-2 for B-11+ at 50 keV in silicon.

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页码：570 / 573

页数：4

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