ION-IMPLANTATION DAMAGE AND ANNEALING OF SILICON AS CHARACTERIZED BY DIFFERENTIAL REFLECTOMETRY

Ion implantation damage and post-implantation annealing behavior of silicon (100) wafers have been studied, applying differential reflectometry as the principal investigative tool. Arsenic and silicon ions of various energies and doses were utilized as implantation species. Differential reflectometry is fast and nondestructive and allows an immediate assessment of minute changes in the electronic structure caused by ion implantation or annealing. In addition, the technique allows a measurement of the thickness of an amorphous layer which is formed during high-dose ion implantation, and an assessment of whether or not an amorphous layer is at the surface or submerged below a crystalline layer. A comparison of our findings with the current understanding of ion implantation damage and with results obtained by cross-sectional transmission electron microscopy is made. Some kinetic data for isothermal annealing and solid-phase epitaxial regrowth of amorphous layers are presented. © 1990, The Electrochemical Society, Inc. All rights reserved.