SURFACE NITRIDATION OF INP WITH A N-2 PLASMA

被引:4
作者
KAMIMURA, K [1 ]
TAKASE, Y [1 ]
ONUMA, Y [1 ]
KUNIOKA, A [1 ]
机构
[1] AOYAMA GAKUIN UNIV,DEPT ELECT ENGN,SETAGAYA KU,TOKYO 157,JAPAN
关键词
D O I
10.1016/0169-4332(89)90100-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A nitride layer was formed on InP by direct nitridation of InP with a N2 plasma. In order to obtain the nitride layer, it was important to reduce the residual oxygen in the plasma. The resistivity of the layer was of the order of 107 ω cm. © 1989.
引用
收藏
页码:443 / 446
页数:4
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