SURFACE NITRIDATION OF INP WITH A N-2 PLASMA

被引：4

作者：

KAMIMURA, K ^{[1
]}

TAKASE, Y ^{[1
]}

ONUMA, Y ^{[1
]}

KUNIOKA, A ^{[1
]}

机构：

[1] AOYAMA GAKUIN UNIV,DEPT ELECT ENGN,SETAGAYA KU,TOKYO 157,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90100-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A nitride layer was formed on InP by direct nitridation of InP with a N2 plasma. In order to obtain the nitride layer, it was important to reduce the residual oxygen in the plasma. The resistivity of the layer was of the order of 107 ω cm. © 1989.

引用

页码：443 / 446

页数：4

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