SOLID SOLUBILITY LIMITS IN ION-IMPLANTED GALLIUM-ARSENIDE

被引：6

作者：

ORRMANROSSITER, KG

JOHNSON, ST

WILLIAMS, JS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90597-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：448 / 452

页数：5

共 11 条

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[4]

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[8]

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[9] LATTICE INCORPORATION OF N-TYPE DOPANTS IN GAAS [J].

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[10] EFFECTS OF IMPLANTATION TEMPERATURE ON LATTICE LOCATION OF TELLURIUM IMPLANTED IN GALLIUM-ARSENIDE [J].

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