High performance near-IR (765nm) AlAs/AlGaAs vertical cavity surface emitting lasers

被引:22
作者
Gulden, KH
Moser, M
Luscher, S
Schweizer, HP
机构
[1] Paul Scherrer Institut Zurich, 8048 Zurich
关键词
vertical cavity surface emitting lasers; surface emitting lasers;
D O I
10.1049/el:19951476
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Near infrared (765nm) AlAs/AlGaAs vertical-cavity surface emitting laser (VCSEL) diodes with minimum threshold currents of 0.6mA and threshold voltages of 1.9V are demonstrated. The peak output powers exceed 5mW. These characteristics represent a significant improvement compared to previously published data for VCSELs operating in this wavelength range.
引用
收藏
页码:2176 / 2178
页数:3
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