ON THE MINORITY-CARRIER QUASI-FERMI LEVEL IN METAL-OXIDE SEMICONDUCTOR TUNNEL STRUCTURES

被引：9

作者：

CHANG, CY

WANG, SJ

机构：

[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 03期

关键词：

D O I：

10.1016/0038-1101(86)90213-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：339 / 353

页数：15

共 24 条

[1] I-V-CHARACTERISTICS OF TUNNEL MOS STRUCTURES WITH SILICON-OXIDE OBTAINED IN RF OXYGEN PLASMA [J].

ATANASSOVA, ED ;

PUSHKAROV, DI .

SOLID-STATE ELECTRONICS, 1982, 25 (08) :781-789

[2]

BAZARAA MS, 1979, NONLINEAR PROGRAM TH

[3] SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1979, 22 (09) :809-817

[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[5] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :365-374

[6] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[7]

CHANG CY, 1985, SOLID ST ELECTRON, V28

[8]

GARRY N, 1983, IEEE T ELECTRON DEV, V30, P1760

[9] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :349-365

[10] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

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