GAAS-MESFET MODELING AND NONLINEAR CAD

被引：73

作者：

CURTICE, WR

机构：

[1] Microwave Semiconductor Corp,, Somerset, NJ, USA, Microwave Semiconductor Corp, Somerset, NJ, USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 02期

关键词：

Manuscript received April 2; 1987; revised August 31; 1987. This work was done while the author was with the Microwave Technology Center; RCA Laboratories. Princeton; NJ; and was sponsored by the Air Force Wright Aeronautical Laboratories; Avionic Laboratory; WPAFB; OH; under Contract F33615-85-(2-1767;

D O I：

10.1109/22.3509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

24

引用

收藏

页码：220 / 230

页数：11

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