THE PERFORMANCE OF SUBMICROMETER GATE LENGTH GAAS-MESFETS

被引:12
作者
CURTICE, WR
机构
关键词
D O I
10.1109/T-ED.1983.21432
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1693 / 1699
页数:7
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