THE PERFORMANCE OF SUBMICROMETER GATE LENGTH GAAS-MESFETS

被引：12

作者：

CURTICE, WR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1693 / 1699

页数：7

相关论文

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