ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES

被引：137

作者：

LUDEKE, R ^{[1
]}

KOMA, A ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：241 / 247

页数：7

共 31 条

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JOANNOPOULOS JD, UNPUBLISHED

[16]

KOMA A, 1976, PHYS REV B, V13, P739

[17]

LUCAS AA, 1972, PROGR SURFACE SCIENC, V2

[18]

Ludeke R., 1975, Critical Reviews in Solid State Sciences, V5, P259, DOI 10.1080/10408437508243483

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ESAKI, L .

[20] OXIDATION OF CLEAN GE AND SI SURFACES [J].

LUDEKE, R ;

KOMA, A .