ELECTRICAL-ACTIVITY OF INDUCED DISLOCATIONS IN OPTICALLY DEGRADED INP

被引:7
作者
AKAMATSU, B
JEANLOUIS, AM
PAPADOPOULO, AC
HENOC, P
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期
关键词
D O I
10.1002/pssa.2210950224
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:557 / 564
页数:8
相关论文
共 21 条
[1]  
AKAMATSU B, 1983, INT J SCANNING ELECT, V4, P1579
[2]  
AKAMATSU B, 1982, DEC C MESUCORA SOC F
[3]   THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].
BERZ, F ;
KUIKEN, HK .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445
[4]   QUANTITATIVE-EVALUATION OF THE EBIC CONTRAST OF DISLOCATIONS [J].
DONOLATO, C .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :269-275
[5]   RAPID DEGRADATION OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS DUE TO 110 DARK LINE DEFECT FORMATION [J].
ENDO, K ;
MATSUMOTO, S ;
KAWANO, H ;
SAKUMA, I ;
KAMEJIMA, T .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :921-923
[6]   DISLOCATIONS IN PIEZOELECTRIC SEMICONDUCTORS [J].
FAIVRE, G ;
SAADA, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (01) :127-&
[7]   ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].
HACKETT, WH .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&
[8]   INDENTATION DISLOCATION ROSETTES IN SILICON [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1470-1472
[9]   TEM CATHODOLUMINESCENCE STUDY OF RECOMBINATION BEHAVIOR AT DISLOCATIONS IN INDIUM-PHOSPHIDE [J].
HUTCHINSON, HJ ;
MYHAJLENKO, S .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (04) :L49-L53
[10]   ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON [J].
KITTLER, M ;
SEIFERT, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :573-583