A NEW METHOD FOR MEASURING THE THRESHOLD VOLTAGE OF SMALL-GEOMETRY MOSFETS FROM SUBTHRESHOLD CONDUCTION

被引：20

作者：

DEEN, MJ

YAN, ZX

机构：

[1] School of Engineering Science, Simon Fraser University, Burnaby

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 05期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Integrated Circuits; CMOS - Integrated Circuits; Digital - Semiconductor Devices; MOS;

D O I：

10.1016/0038-1101(90)90234-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for measuring the threshold voltage of small geometry MOS devices is presented. Based on the drain current equation in the subthreshold region, the threshold voltage (VTH), defined as the gate voltage required for a surface band-bending of 2φF, can be accurately determined experimentally by the Quasi-Constant-Current (QCC) method. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in subthreshold region, extracting the VTH with a unique value, and being suitable for small geometry devices over a wide range of voltage biases, temperatures, and process parameter variations. It can be used either for circuit simulation like the MOS3 model in SPICE, or as a routine monitor of processing like channel doping profile, gate oxide thickness or source and drain junction depths. © 1990.

引用

页码：503 / 511

页数：9

共 22 条

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].