ROOM-TEMPERATURE OXIDATION OF NI, PD, AND PT SILICIDES

被引：18

作者：

CROS, A ^{[1
]}

POLLAK, RA ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2253 / 2257

页数：5

共 19 条

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[6] OXIDATION BEHAVIOR OF PD-SI COMPOUNDS [J].

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[7]

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[8]

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[9] ELECTRONIC-STRUCTURE OF NICKEL SILICIDES NI2SI, NISI, AND NISI2 [J].

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PHYSICAL REVIEW B, 1982, 26 (02) :546-553

[10] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

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