METAL ZINC SELENIDE SCHOTTKY BARRIERS

被引：21

作者：

TYAGI, MS ^{[1
]}

ARORA, SN ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssa.2210320118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：165 / 172

页数：8

共 17 条

[1] ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODES [J].

ALLEN, JW ;

TURVEY, K ;

LIVINGSTONE, AW .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1363-+

[2] DC ELECTROLUMINESCENCE IN HOT-PRESSED ZNSE DIODES [J].

CHIN, TN ;

BOYER, LA .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :143-146

[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[4] CORRELATION OF SCHOTTKY-BARRIER HEIGHT MEASUREMENTS DETERMINED FROM CAPACITANCE METHOD AND SATURATION CURRENT [J].

HACKAM, R ;

HARROP, P .

SOLID-STATE ELECTRONICS, 1972, 15 (09) :1031-&

[5] EXCITONS AND ABSORPTION EDGE IN ZNSE [J].

HITE, GE ;

MARPLE, DTF ;

AVEN, M ;

SEGALL, B .

PHYSICAL REVIEW, 1967, 156 (03) :850-&

[6] DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J].

KAR, S .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :169-181

[7] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].

KURTIN, S ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+

[8] ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES [J].

LIVINGSTONE, AW ;

TURVEY, K ;

ALLEN, JW .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :351-356

[9] PHYSICAL-PROPERTIES OF AU-ZNSE METAL-SEMICONDUCTOR CONTACT [J].

MACH, R ;

TREPTOW, H ;

LUDWIG, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02) :567-573

[10] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

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