MOLECULAR-BEAM EPITAXIAL-GROWTH AND THERMODYNAMIC ANALYSIS OF INGAAS AND INALAS LATTICE-MATCHED TO INP

被引：4

作者：

MCELHINNEY, M

STANLEY, CR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00893-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Reflection high-energy electron diffraction (RHEED) intensity oscillations have been used to detect the onset of metal droplet formation on the surface of InAs, InGaAs and InAlAs during molecular beam epitaxy. The growth conditions which produce such droplets are shown to be in good agreement with predictions based on thermodynamic arguments.

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页码：518 / 522

页数：5

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