ATOMICALLY RESOLVED IMAGE OF CLEAVED GAAS(110) SURFACE OBSERVED WITH AN ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE

被引：9

作者：

OHTA, M

SUGAWARA, Y

HONTANI, K

MORITA, S

OSAKA, F

SUZUKI, M

NAGAOKA, H

MISHIMA, S

OKADA, T

机构：

[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA, IBARAKI 30026, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

[3] OLYMPUS OPT CO LTD, DEPT RES, HACHIOJI, TOKYO 192, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 1A期

关键词：

UHV AFM; ATOMIC FORCE MICROSCOPE; AFM; GAAS; ATOMIC RESOLUTION; SEMICONDUCTOR SURFACE; DANGLING BOND; CLEAN SURFACE;

D O I：

10.1143/JJAP.33.L52

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7 +/- 0.5 angstrom X 4.0 +/- 0.4 angstrom is resolved. This result suggests that the UHV AFM has potential capability for investigating semiconductor surfaces having dangling bonds on an atomic scale.

引用

收藏

页码：L52 / L54

页数：3

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