LOCAL ETCH-RATE CONTROL OF MASKED INP/INGAASP BY DIFFUSION-LIMITED ETCHING

被引：7

作者：

BRENNER, T

MELCHIOR, H

机构：

[1] Institute of Quantum Electronics, Swiss Federal Institute of Technology

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 07期

关键词：

D O I：

10.1149/1.2055034

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Controlled etch rates in InP/InGaAsP are achieved by bromine-methanol etchants working in the diffusion-limited regime over partially masked areas. Depending on the widths of the SiO(x) mask openings, etch depth enhancements reach up to a factor of eight as compared to unmasked areas.

引用

页码：1954 / 1956

页数：3

共 7 条

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