PREFERENTIAL ETCHING OF INGAASP/INP USING LOW-TEMPERATURE BROMINE METHANOL FOR PLANAR BURIED HETEROSTRUCTURE LASERS

被引：6

作者：

HUO, DTC

YAN, MF

WYNN, JD

WILT, DP

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 06期

关键词：

D O I：

10.1149/1.2097031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1828 / 1830

页数：3

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