ENHANCED MOBILITY IN INVERTED ALXGA1-XAS-GAAS HETEROJUNCTIONS - BINARY ON TOP OF TERNARY

被引：11

作者：

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

SU, SL ^{[1
]}

FISCHER, R ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 23期

关键词：

D O I：

10.1049/el:19810607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：870 / 871

页数：2

相关论文

共 12 条

[1] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
DELESCLUSE, P
LAVIRON, M
CHAPLART, J
DELAGEBEAUDEUF, D
LINH, NT
[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344
[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[4] DRUMMOND TJ, UNPUBLISHED
[5] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES
HIYAMIZU, S
NANBU, K
MIMURA, T
FUJII, T
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L378 - L380
[6] KEEVER M, UNPUBLISHED
[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[8] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE
MORKOC, H
WITKOWSKI, LC
DRUMMOND, TJ
STANCHAK, CM
CHO, AY
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754
[9] MORKOC H, 1981, IEEE ELECTRON DE OCT
[10] SHOCKLEY W, 1952, IRE P, P1365