CHARGE CENTROID IN MNOS DEVICES

被引：17

作者：

LEHOVEC, K ^{[1
]}

FEDOTOWSKY, A ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 07期

关键词：

D O I：

10.1063/1.324109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2955 / 2960

页数：6

共 23 条

[1] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[2] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].

ARNETT, PC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243

[3]

CRAIN DW, 1976, THESIS U SO CALIFORN

[4] FIELD-ENHANCED IONIZATION [J].

DUSSEL, GA ;

BOER, KW .

PHYSICA STATUS SOLIDI, 1970, 39 (02) :375-&

[5] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J].

FROHMANB.D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+

[6] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[7] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS [J].

KAHNG, D ;

SUNDBURG, WJ ;

BOULIN, DM ;

LIGENZA, JR .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09) :1723-1739

[8]

KATONBE T, 1973, JPN J PHYS, V12, P1633

[9] CONDUCTION PROCESSES IN SILICON NITRIDE [J].

KENDALL, EJM .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (22) :2509-&

[10] REMOVAL OF MEMORY PROPERTIES OF MNOS DEVICES [J].

KENDALL, EJM ;

HASLETT, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :287-&

← 1 2 3 →