REMOVAL OF MEMORY PROPERTIES OF MNOS DEVICES

被引:3
作者
KENDALL, EJM
HASLETT, JW
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D O I
10.1109/T-ED.1972.17409
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:287 / &
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共 19 条
[1]   PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].
CHU, TL ;
SZEDON, JR ;
LEE, CH .
SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&
[2]   STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS [J].
DALTON, JV ;
DROBEK, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :865-+
[3]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[4]  
Dearnaley G., 1969, Physics Bulletin, V20, P165
[5]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[6]  
GOODMAN AM, 1970, RCA REV, V31, P342
[7]   CONDUCTION PROCESSES IN SILICON NITRIDE [J].
KENDALL, EJM .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (22) :2509-&
[8]   HYSTERESIS AND MEMORY PROPERTIES OF SILICON-SILICON NITRIDE SYSTEM [J].
KENDALL, EJM .
SOLID-STATE ELECTRONICS, 1971, 14 (09) :791-&
[9]   TRAPPING LEVELS IN SILICON NITRIDE [J].
KENDALL, EJM .
ELECTRONICS LETTERS, 1968, 4 (21) :468-&
[10]   TRAPPING LEVELS IN SILICON-SILICON NITRIDE SYSTEM [J].
KENDALL, EJM .
PHYSICA STATUS SOLIDI, 1969, 32 (02) :763-&