IMPLANTATION-DOMINATED JUNCTION DEPTHS OF LOW-TEMPERATURE AND ELECTRON-BEAM-ANNEALED AS SOURCE DRAIN REGIONS

被引：1

作者：

AMARATUNGA, GAJ ^{[1
]}

KNEE, ND ^{[1
]}

HART, MJ ^{[1
]}

EVANS, AGR ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECTR & INFORMAT ENGN,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：445 / 448

页数：4

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