DEFECT CONTROL DURING SILICON EPITAXIAL-GROWTH USING DICHLOROSILANE

被引：11

作者：

BALIGA, BJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期

关键词：

D O I：

10.1149/1.2124031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1078 / 1084

页数：7

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