TRIPYRAMID AND RAISED-TRIANGLE (3) DIAMOND-LATTICE IMPERFECTIONS IN SILICON EPITAXIAL FILMS

被引：10

作者：

LAWRENCE, JE

TUCKER, RN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.1702931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3095 / &

共 16 条

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[7]

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[8] TRIPYRAMID GROWTH OF EPITAXIAL SILICON [J].

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[9]

LAWRENCE JE, GE ADVANCED ELECTRON

[10]

LIGHT TB, 1962, 1961 AIME MET C LOS, V15, P137

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