A POWER JUNCTION GATE FIELD-EFFECT TRANSISTOR STRUCTURE WITH HIGH BLOCKING GAIN

被引：17

作者：

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 02期

关键词：

D O I：

10.1109/T-ED.1980.19869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：368 / 373

页数：6

共 15 条

[1] GRID DEPTH DEPENDENCE OF THE CHARACTERISTICS OF VERTICAL CHANNEL FIELD CONTROLLED THYRISTORS [J].

BALIGA, BJ .

SOLID-STATE ELECTRONICS, 1979, 22 (03) :237-239

[2]

BALIGA BJ, 1978, 154TH EL SOC M, P595

[3] ETCHING VERY NARROW GROOVES IN SILICON [J].

KENDALL, DL .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :195-198

[4] OPTIMIZATION OF NONPLANAR POWER MOS-TRANSISTORS [J].

LISIAK, KP ;

BERGER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1229-1234

[5] ENTIRELY DIFFUSED VERTICAL CHANNEL JFET - THEORY AND EXPERIMENT [J].

MORENZA, JL ;

ESTEVE, D .

SOLID-STATE ELECTRONICS, 1978, 21 (05) :739-746

[6] TRANSITION FROM PENTODE- TO TRIODE-LIKE CHARACTERISTICS IN FIELD EFFECT TRANSISTORS [J].

NEUMARK, GF ;

RITTNER, ES .

SOLID-STATE ELECTRONICS, 1967, 10 (04) :299-&

[7] HIGH-FREQUENCY HIGH-POWER STATIC INDUCTION TRANSISTOR [J].

NISHIZAWA, JI ;

YAMAMOTO, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :314-322

[8] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].

NISHIZAWA, JI ;

TERASAKI, T ;

SHIBATA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197

[9] VERTICAL FET WITH SELF-ALIGNED ION-IMPLANTED SOURCE AND GATE REGIONS [J].

OZAWA, O ;

IWASAKI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) :56-57

[10] VERTICAL CHANNEL JFET FABRICATED USING SILICON PLANAR TECHNOLOGY [J].

OZAWA, O ;

IWASAKI, H ;

MURAMOTO, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) :511-518

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