VERTICAL FET WITH SELF-ALIGNED ION-IMPLANTED SOURCE AND GATE REGIONS

被引：6

作者：

OZAWA, O

IWASAKI, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 01期

关键词：

D O I：

10.1109/T-ED.1978.19031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：56 / 57

页数：2

共 9 条

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[6] VERTICAL CHANNEL JFET FABRICATED USING SILICON PLANAR TECHNOLOGY [J].

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