VERTICAL CHANNEL JFET FABRICATED USING SILICON PLANAR TECHNOLOGY

被引：8

作者：

OZAWA, O

IWASAKI, H

MURAMOTO, K

机构：

[1] TOKYO SHIBAURA ELECT CO LTD, TOSHIBA RES & DEV CTR, KAWASAKI, JAPAN

[2] TOKYO SHIBAURA ELECT CO LTD, TOSHIBA TRANSISTOR WORKS, KAWASAKI, JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 04期

关键词：

D O I：

10.1109/JSSC.1976.1050768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：511 / 518

页数：8

共 16 条

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[10]

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