INTERFACIAL LAYER FORMATION OF THE CDTE/INSB HETEROINTERFACES GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION

CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 300°C. The stoichiometry of the CdTe/InSb heterostructure was observed by Auger electron spectroscopy, and Auger depth profiles demonstrated that the CdTe/InSb heterointerface was not abrupt. Transmission electron microscopy verified the formation of an interfacial layer in the CdTe/InSb interface and the formation of the stacking faults in the CdTe thin film. These results indicated that the films grown at approximately 270°C contained a formation problem of an interfacial layer due to interdiffusion from the InSb prior to the growth of the CdTe, and that the interfacial layer might deteriorate the electrical property of the CdTe epitaxial layer. © 1994 American Institute of Physics.