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[34] SEAH MP, 1983, PRACTICAL SURFACE AN, P181

[35] SEGNER J, 1985, 3RD P S INT GRAV SEC, P85

[36] Sunami H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P694

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[38] TANIGAKI T, 1984, SECONDARY ION MASS S, V4, P305

[39] UCHIDA H, 1988, ELECTROCHEM SOC, V887, P5

[40] VONCRIEGERN R, 1988, SECONDARY ION MASS S, V6, P419

[31] PENKA V, 1989, IN PRESS SPECTROCHIM

[32] ANALYSIS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES BY SECONDARY ION MASS-SPECTROMETRY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4036 - 4042

[33] A HIGHLY SENSITIVE ENERGY-DISPERSIVE X-RAY SPECTROMETER WITH MULTIPLE TOTAL REFLECTION OF THE EXCITING BEAM [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 193 (1-2): : 239 - 243

[34] SEAH MP, 1983, PRACTICAL SURFACE AN, P181

[35] SEGNER J, 1985, 3RD P S INT GRAV SEC, P85

[36] Sunami H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P694

[37] MECHANISMS OF REACTIVE SPUTTERING OF TITANIUM NITRIDE AND TITANIUM CARBIDE .1. INFLUENCE OF PROCESS PARAMETERS ON FILM COMPOSITION [J]. THIN SOLID FILMS, 1983, 105 (04) : 353 - 366

[38] TANIGAKI T, 1984, SECONDARY ION MASS S, V4, P305

[39] UCHIDA H, 1988, ELECTROCHEM SOC, V887, P5

[40] VONCRIEGERN R, 1988, SECONDARY ION MASS S, V6, P419