IMPURITY-INDUCED DISORDERING OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH (SI2)X(GAAS)1-X BARRIERS

被引:9
作者
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
KALISKI, RW
BAKER, JE
DEPPE, DG
BURNHAM, RD
THORNTON, RL
PAOLI, TL
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1007/BF02667795
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:87 / 91
页数:5
相关论文
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