EFFECT OF EPITAXIAL REALIGNMENT ON THE LEAKAGE BEHAVIOR OF ARSENIC-IMPLANTED, AS-DEPOSITED POLYCRYSTALLINE SI-ON-SINGLE CRYSTAL SI DIODES

被引：5

作者：

BATRA, S ^{[1
]}

JENG, N ^{[1
]}

SULTAN, A ^{[1
]}

PICONE, K ^{[1
]}

BHATTACHARYA, S ^{[1
]}

PARK, KH ^{[1
]}

BANERJEE, S ^{[1
]}

KAO, D ^{[1
]}

MANNING, M ^{[1
]}

DENNISON, C ^{[1
]}

机构：

[1] MICRON SEMICOND INC,BOISE,ID 83706

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期

关键词：

DIFFUSION; ELEVATED SOURCE DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS); POLYCRYSTALLINE SILICON EMITTER BIPOLAR JUNCTION TRANSISTORS (BJT);

D O I：

10.1007/BF02661629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial ''native'' oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.

引用

页码：551 / 554

页数：4

共 11 条

[1]

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