2-DIMENSIONAL COMPUTER-ANALYSIS OF GAAS-MESFETS

被引：1

作者：

DONG, XQ

ELNOKALI, M

机构：

[1] Department of Electrical Engineering, University of Pittsburgh, Pittsburgh

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90265-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional numerical simulator for GaAs MESFETs is presented. A new mobility model that accounts for surface scattering effects is introduced. The numerical predictions of the simulator for the drain current are compared with the experimental data revealing a good agreement over a wide range of voltages.

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收藏

页码：547 / 552

页数：6

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