2-DIMENSIONAL COMPUTER-ANALYSIS OF GAAS-MESFETS

被引：1

作者：

DONG, XQ

ELNOKALI, M

机构：

[1] Department of Electrical Engineering, University of Pittsburgh, Pittsburgh

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90265-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional numerical simulator for GaAs MESFETs is presented. A new mobility model that accounts for surface scattering effects is introduced. The numerical predictions of the simulator for the drain current are compared with the experimental data revealing a good agreement over a wide range of voltages.

引用

页码：547 / 552

页数：6

共 18 条

[11] 2-DIMENSIONAL COMPUTER-SIMULATION FOR SWITCHING A BIPOLAR-TRANSISTOR OUT OF SATURATION [J].

MANCK, O ;

ENGL, WL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :339-347

[12] ITERATIVE SOLUTION METHOD FOR LINEAR-SYSTEMS OF WHICH COEFFICIENT MATRIX IS A SYMMETRIC M-MATRIX [J].

MEIJERINK, JA ;

VANDERVORST, HA .

MATHEMATICS OF COMPUTATION, 1977, 31 (137) :148-162

[13] A TIME-DEPENDENT NUMERICAL-MODEL OF THE INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1981, 24 (10) :959-966

[14]

MURARKA SP, 1989, ELECTRONIC MATERIALS

[15] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].

SCHARFETTER, DL ;

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+

[16] PROCESS AND DEVICE MODELING FOR VLSI [J].

SELBERHERR, S .

MICROELECTRONICS RELIABILITY, 1984, 24 (02) :225-257

[17] A TIME-DEPENDENT AND TWO-DIMENSIONAL NUMERICAL-MODEL FOR MOSFET DEVICE OPERATION [J].

YAMAGUCHI, K .

SOLID-STATE ELECTRONICS, 1983, 26 (09) :907-916

[18] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J].

YAMAGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1068-1074

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