A TIME-DEPENDENT AND TWO-DIMENSIONAL NUMERICAL-MODEL FOR MOSFET DEVICE OPERATION

被引：12

作者：

YAMAGUCHI, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期

关键词：

D O I：

10.1016/0038-1101(83)90063-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：907 / 916

页数：10

共 24 条

[1]

ADLER MS, 1979, JUN P NASECODE DUBL, V1

[2]

BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY HE

[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].

BREWS, JR ;

FICHTNER, W ;

NICOLLIAN, EH ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4

[4] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[5]

KASAI R, 1979, T IECE JAPAN C, V62, P389

[6] 2-DIMENSIONAL MATHEMATICAL ANALYSIS OF A PLANAR TYPE JUNCTION FIELD-EFFECT TRANSISTOR [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (06) :662-&

[7] ELECTRIC CURRENT SATURATION IN A JUNCTION FIELD-EFFECT TRANSISTOR [J].

KENNEDY, DP ;

OBRIEN, RR .

SOLID-STATE ELECTRONICS, 1969, 12 (10) :829-&

[8] IMPURITY CONCENTRATION DEPENDENCE OF DENSITY OF STATES IN SEMICONDUCTORS [J].

KLEPPINGER, DD ;

LINDHOLM, FA .

SOLID-STATE ELECTRONICS, 1971, 14 (03) :199-+

[9]

MASUDA H, 1977, T IECE JAPAN C, V60, P205

[10] A TIME-DEPENDENT NUMERICAL-MODEL OF THE INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1981, 24 (10) :959-966

← 1 2 3 →