MODEL CALCULATIONS ON INFLUENCE OF DANGLING BONDS ON OPTICAL-PROPERTIES OF AMORPHOUS SILICON FILMS

被引：5

作者：

SCHWIDEFSKY, F ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

THIN SOLID FILMS | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1016/0040-6090(75)90088-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 244

页数：12

共 67 条

[1] QUANTUM THEORY OF DIELECTRIC CONSTANT IN REAL SOLIDS [J].

ADLER, SL .

PHYSICAL REVIEW, 1962, 126 (02) :413-+

[2] BAND-STRUCTURE OF SI III AND GE III [J].

ALBEN, R ;

WEAIRE, D ;

THORPE, MF ;

GOLDSTEIN, S .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (02) :545-+

[3] MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS [J].

ANDERSON, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1540-1546

[4] PROPERTIES OF AMORPHOUS SILICON FILMS - DEPENDENCE ON DEPOSITION RATE [J].

BAHL, SK ;

BHAGAT, SM ;

GLOSSER, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (08) :1159-1163

[5] DEPOSITION TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES OF A-GE [J].

BAUER, RS ;

GALEENER, FL .

SOLID STATE COMMUNICATIONS, 1972, 10 (12) :1171-&

[6]

BAUER RS, 1972, J NON CRYST SOLIDS, V8, P196

[7]

Beaglehole D., 1970, Journal of Non-Crystalline Solids, V4, P272, DOI 10.1016/0022-3093(70)90051-7

[8] ELECTRONIC DIELECTRIC CONSTANT OF AMORPHOUS SEMICONDUCTORS [J].

BRODSKY, MH ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1970, 25 (12) :798-&

[9] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J].

BRODSKY, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :125-&

[10] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

← 1 2 3 4 5 6 7 →