ATOMIC LAYER EPITAXIAL-GROWTH STUDIES OF ZNSE USING DIMETHYLZINC AND HYDROGEN SELENIDE

Atomic layer epitaxial (ALE) growth studies of ZnSe were carried out in a low pressure horizontal metalorganic vapor phase epitaxial (MOVPE) reactor. Growth was carried out by alternately exposing the GaAs substrate to hydrogen selenide (H2Se) and dimethylzinc (DMZn) using flow modulation epitaxy (FME). It was found that at a susceptor temperature of 200-degrees-C and above, the adsorption of either of the reactants is extremely small and hence self-limiting monolayer growth does not take place. Significant deposition of ZnSe took place on the reactor wall in front of the susceptor as well. A hot wall reactor with colder susceptor configuration was used to prevent deposition on the reactor walls and also to confirm the growth model proposed.