ENHANCEMENT OF GROWTH-RATE DUE TO TIN DOPING IN GAAS EPILAYER GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：8

作者：

CHANG, CY

LEE, MK

SU, YK

HSU, WC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5464 / 5465

页数：2

共 17 条

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[4]

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