ANNEALING OF HIGH-DOSE SB-IMPLANTED SINGLE-CRYSTAL SILICON

被引：11

作者：

GUERRERO, E

POTZL, H

STINGEDER, G

GRASSERBAUER, M

PIPLITZ, K

CHU, WK

机构：

[1] LUDWIG BOLTZMANN INST SOLID STATE PHYS,VIENNA,AUSTRIA

[2] VIENNA TECH UNIV,INST ANALYT CHEM,A-1040 VIENNA,AUSTRIA

[3] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113720

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3048 / 3052

页数：5

共 16 条

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