NONLOCAL ASPECTS OF BREAKDOWN IN PIN DIODES

被引：21

作者：

MILLIDGE, S

HERBERT, DC

KANE, M

SMITH, GW

WIGHT, DR

机构：

[1] Electron. Div., DRA, Malvern

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1088/0268-1242/10/3/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of breakdown voltage in p-i-n diodes with thin i regions are compared with local and non-local theoretical calculations. It is found that overshoot effects compensate for the dead space at high fields close to breakdown but that non-local aspects become stronger at lower fields.

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收藏

页码：344 / 347

页数：4

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