STRESS IN SILICON DIOXIDE FILMS DEPOSITED USING CHEMICAL VAPOR-DEPOSITION TECHNIQUES AND THE EFFECT OF ANNEALING ON THESE STRESSES

被引：55

作者：

BHUSHAN, B ^{[1
]}

MURARKA, SP ^{[1
]}

GERLACH, J ^{[1
]}

机构：

[1] GOULD AMI,POCATELLO,ID 83201

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 05期

关键词：

D O I：

10.1116/1.584918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1068 / 1074

页数：7

相关论文

共 17 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
ADAMS, AC
ALEXANDER, FB
CAPIO, CD
SMITH, TE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
[2] ADAMS C, 1988, VLSI TECHNOLOGY, pCH6
[3] EFFECTS OF HUMIDITY ON STRESS IN THIN SILICON DIOXIDE FILMS
BLECH, I
COHEN, U
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4202 - 4207
[4] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
JACCODINE, RJ
SCHLEGEL, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +
[5] KERN W, 1976, RCA REV, V37, P55
[6] KERN W, 1976, RCA REV, V37, P3
[7] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS
LANFORD, WA
TRAUTVETTER, HP
ZIEGLER, JF
KELLER, J
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 566 - 568
[8] STRESS IN THIN FILMS OF SILANE VAPOR-DEPOSITED SILICON DIOXIDE
LATHLAEN, R
DIEHL, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 620 - &
[9] PHOSPHORUS INCORPORATION EFFECTS IN SILICON DIOXIDE GROWN AT LOW-PRESSURE AND TEMPERATURE
LEARN, AJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 405 - 409
[10] MATTSON B, 1980, SOLID STATE TECHNOL, V60